Electrostatically defined quantum dots in a Si/SiGe heterostructure
Article
Wild, A, Sailer, J, Nützel, J, Abstreiter, G, Ludwig, S
and Bougeard, D
(2010)
Electrostatically defined quantum dots in a Si/SiGe heterostructure.
New Journal of Physics 12 (11), p. 113019.
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| Item type | Article | ||||
| Journal or Publication Title | New Journal of Physics | ||||
| Publisher | IOP PUBLISHING LTD | ||||
| Place of Publication | BRISTOL | ||||
| Volume | 12 | ||||
| Number of Issue or Book Chapter | 11 | ||||
| Page Range | p. 113019 | ||||
| Date | 2010 | ||||
| Date of publication | 19 Dec 2024 11:31 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard | ||||
| Identification Number |
| ||||
| Keywords | SI/SI0.7GE0.3 HETEROSTRUCTURE; POINT-CONTACT; TRANSPORT; SPIN; SILICON; NANOSTRUCTURES; POLARIZATION; RELAXATION; SI; | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 65582 |
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