Critical behavior from the anomalous Hall effect in (GaMn)As
Jiang, Wanjun
, Wirthmann, André, Gui, Y. S., Zhou, X. Z., Reinwald, M., Wegscheider, W., Hu, C.-M. and Williams, Gwyn
(2009)
Critical behavior from the anomalous Hall effect in (GaMn)As.
Physical Review B 80 (21).
Date of publication of this fulltext: 19 Dec 2024 11:58
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| Item type | Article | ||||
| Journal or Publication Title | Physical Review B | ||||
| Publisher: | AMER PHYSICAL SOC | ||||
|---|---|---|---|---|---|
| Place of Publication: | COLLEGE PK | ||||
| Volume: | 80 | ||||
| Number of Issue or Book Chapter: | 21 | ||||
| Date | 2009 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider | ||||
| Identification Number |
| ||||
| Keywords | FERROMAGNETISM; SEMICONDUCTORS; (GA,MN)AS; MN)AS; (GA; critical phenomena; ferromagnetic materials; gallium compounds; Hall effect; magnetic epitaxial layers; magnetic semiconductors | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 66742 |
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