Abstract
We have analyzed photoconductivity in Pb1-xSnxTe(In) under the action of similar to 100 ns long terahertz laser pulses with the wavelength varying from 90 to 280 mu m in the temperature range 4.2-300 K. Strong photoresponse has been observed at all laser wavelengths used. Two types of photoresponse have been detected. Positive persistent photoconductivity, which is observed at T < 10 K is due to ...
Abstract
We have analyzed photoconductivity in Pb1-xSnxTe(In) under the action of similar to 100 ns long terahertz laser pulses with the wavelength varying from 90 to 280 mu m in the temperature range 4.2-300 K. Strong photoresponse has been observed at all laser wavelengths used. Two types of photoresponse have been detected. Positive persistent photoconductivity, which is observed at T < 10 K is due to photoexcitation of impurity states, whereas negative nonpersistent photoresponse prevailing at higher temperatures T similar to 25 K results from free carrier heating. Specific features of photoconductivity mechanisms are discussed.
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