Growth of crack-free GaN on Si(111) with graded AlGaN buffer layers
Article
Able, A., Wegscheider, W., Engl, K. and Zweck, J. (2005) Growth of crack-free GaN on Si(111) with graded AlGaN buffer layers. Journal of Crystal Growth 276 (3-4), pp. 415-418.Alternative links to fulltext
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Details
| Item type | Article | ||||
| Journal or Publication Title | Journal of Crystal Growth | ||||
| Publisher | ELSEVIER SCIENCE BV | ||||
| Place of Publication | AMSTERDAM | ||||
| Volume | 276 | ||||
| Number of Issue or Book Chapter | 3-4 | ||||
| Page Range | pp. 415-418 | ||||
| Date | 2005 | ||||
| Date of publication | 19 Dec 2024 15:03 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider | ||||
| Identification Number |
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| Keywords | ALN; SAPPHIRE; SILICON; metalorganic vapor phase epitaxy; nitrides; semiconducting III-V materials | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 70821 |
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