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MeV-boron implanted layer, oxygen precipitates and poly-silicon back side combined in one silicon wafer: at what defect will Cu and Ni be gettered?
Hölzl, R., Fabry, L., Range, K.-J. and Pech, R. (2002) MeV-boron implanted layer, oxygen precipitates and poly-silicon back side combined in one silicon wafer: at what defect will Cu and Ni be gettered? Applied Physics A: Materials Science & Processing 74 (4), pp. 545-551.Date of publication of this fulltext: 19 Dec 2024 15:43
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| Item type | Article | ||||
| Journal or Publication Title | Applied Physics A: Materials Science & Processing | ||||
| Publisher: | SPRINGER-VERLAG | ||||
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| Place of Publication: | NEW YORK | ||||
| Volume: | 74 | ||||
| Number of Issue or Book Chapter: | 4 | ||||
| Page Range: | pp. 545-551 | ||||
| Date | 2002 | ||||
| Institutions | Chemistry and Pharmacy > Institut für Anorganische Chemie | ||||
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| Keywords | COPPER; DIFFUSION; CONTAMINATION; KINETICS; LIFETIME; IRON; FE; | ||||
| Dewey Decimal Classification | 500 Science > 540 Chemistry & allied sciences | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 73046 |
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