Abstract
Electrically controlled rotation of spins in a semiconductingchannelis a prerequisite for the successful realization of many spintronicdevices, like, e.g., the spin-field-effect transistor (sFET). To date,there have been only a few reports on electrically controlled spinprecession in sFET-like devices. These devices operate in the ballisticregime, as postulated in the original sFET proposal, and ...
Abstract
Electrically controlled rotation of spins in a semiconductingchannelis a prerequisite for the successful realization of many spintronicdevices, like, e.g., the spin-field-effect transistor (sFET). To date,there have been only a few reports on electrically controlled spinprecession in sFET-like devices. These devices operate in the ballisticregime, as postulated in the original sFET proposal, and hence needhigh SOC channel materials in practice. Here, we demonstrate gate-controlledprecession of spins in a nonballistic sFET using an array of narrowdiffusive wires as a channel between a spin source and a spin drain.Our study shows that spins traveling in a semiconducting channel canbe coherently rotated on a distance far exceeding the electrons'mean free path, and spin-transistor functionality can be thus achievedin nonballistic channels with relatively low SOC, relaxing two majorconstraints of the original sFET proposal.
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