Electrical Manipulation of Intervalley Trions in Twisted MoSe2 Homobilayers at Room Temperature

URN to cite this document:: urn:nbn:de:bvb:355-epub-763963
DOI to cite this document:: 10.5283/epub.76396

Rosa, Bárbara L. T. ; Faria Junior, Paulo E.

; Cadore, Alisson R.

; Yang, Yuhui ; Koulas-Simons, Aris ; Palekar, Chirag C. ; Tongay, Seth Ariel

; Fabian, Jaroslav

; Reitzenstein, Stephan

License: Creative Commons Attribution 4.0
PDF - Published Version
Early View
(2MB)

Date of publication of this fulltext: 20 Mar 2025 17:10

Alternative links to fulltext:DOI Publisher

Details

Preview: Early View

Export bibliographical data

Abstract

The impressive physics and applications of intra- and interlayer excitons in a transition metal dichalcogenide twisted-bilayer make these systems compelling platforms for exploring the manipulation of their optoelectronic properties through electrical fields. This work studies the electrical control of excitonic complexes in twisted MoSe2 homobilayer devices at room temperature. Gate-dependent ...