Probing the electronic structure at the boundary of topological insulators in the Bi2⁢Se3 family by combined scanning tunneling and atomic force microscopy

URN to cite this document:: urn:nbn:de:bvb:355-epub-766424
DOI to cite this document:: 10.5283/epub.76642

Setescak, Christoph Stephen

; Aguilera, Irene ; Weindl, Adrian

; Kronseder, Matthias

; Donarini, Andrea

; Giessibl, Franz J.

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Date of publication of this fulltext: 06 May 2025 07:03

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Abstract

We develop a numerical scheme for the calculation of tunneling current I and differential conductance dI/dV of metal- and CO-terminated STM tips on the topological insulators Bi2Se3, Bi2Te2Se as well as Bi2Te3, and find excellent agreement with experiment. The calculation is an application of Chen's derivative rule, whereby the Bloch functions are obtained from Wannier-interpolated tight-binding ...