We investigate the influence of interedge channel scattering (IECS) on adiabatic transport in a two-dimensional electron gas (2DEG) in the quantum Hall regime. To realize adiabatic transport (non-equal distribution of the current among the available edge channels) Schottky gates are used to create areas of different well- defined filling factors. By studying the current dependence one can identify scattering processes and learn how these processes are affected by the device structure. Irradiating the device with photons at the cyclotron resonance frequency in the adiabatic transport regime leads to a drastic change in the magneto-resistance, indicating possible application as a sensitive photoconductor. In addition, a new device structure is discussed allowing direct measurement of the IECS rate.