Abstract
The valance band structure of metalorganic vapor phase epitaxy (MOVPE) grown strained GaxIn1 � xAs/InP single quantum well structures is experimentally verified by the determination of the effective in-plane hole masses. The masses are obtained by performing magnetotransport experiments. Mobilities up to 8700 cm2/V s for gallium content of x=0.3 were reached. The effective heavy hole ...
Abstract
The valance band structure of metalorganic vapor phase epitaxy (MOVPE) grown strained GaxIn1 � xAs/InP single quantum well structures is experimentally verified by the determination of the effective in-plane hole masses. The masses are obtained by performing magnetotransport experiments. Mobilities up to 8700 cm2/V s for gallium content of x=0.3 were reached. The effective heavy hole masses of compressively strained GaInAs are drastically reduced compared to bulk material in excellent agreement to calculations using the k · p-perturbation theory, whereas the masses of the uppermost valence band of tensile strained material appear to be rather high. Consequently, no experimental determination was possible in the latter case. A precise analysis of the Shubnikov�de Haas oscillation patterns of compressively strained quantum wells shows a spin splitting of the uppermost heavy hole band, containing two different effective masses.
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