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Coexistence of ferromagnetism and quantum Hall effect in Mn modulation-doped two-dimensional hole systems

Wurstbauer, Ursula ; Soda, Marcello ; Jakiela, R ; Schuh, Dieter ; Weiss, Dieter ; Zweck, Josef ; Wegscheider, Werner


Modulation doping using Mn as an acceptor has been applied to the molecular beam epitaxial grown compressively strained InAs channels. Strain engineering has been accomplished by the growth of a graded, fully relaxed InxAl1-xAs buffer layer on GaAs(0 0 1) substrates in which the In content x was increased from 0% to 75%. Transmission electron microscopical investigation of the heterostructures ...


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