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Coexistence of ferromagnetism and quantum Hall effect in Mn modulation-doped two-dimensional hole systems

Wurstbauer, Ursula ; Soda, Marcello ; Jakiela, R ; Schuh, Dieter ; Weiss, Dieter ; Zweck, Josef ; Wegscheider, Werner



Abstract

Modulation doping using Mn as an acceptor has been applied to the molecular beam epitaxial grown compressively strained InAs channels. Strain engineering has been accomplished by the growth of a graded, fully relaxed InxAl1-xAs buffer layer on GaAs(0 0 1) substrates in which the In content x was increased from 0% to 75%. Transmission electron microscopical investigation of the heterostructures ...

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