Tuning of structure inversion asymmetry by the delta-doping position in (001)-grown GaAs quantum wells

URN to cite this document:: urn:nbn:de:bvb:355-epub-82841
DOI to cite this document:: 10.5283/epub.8284

Lechner, Vera ; Golub, Leonid

; Olbrich, Peter ; Stachel, Sebastian ; Schuh, Dieter ; Wegscheider, Werner ; Belkov, Vassilij ; Ganichev, Sergey

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Date of publication of this fulltext: 05 Aug 2009 13:58

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Abstract

Both structure and bulk inversion asymmetry in modulation-doped (001)-grown GaAs quantum wells were investigated employing the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be accurately tailored by the delta-doping layer position. Symmetrically doped structures exhibit a substantial SIA due to impurity segregation during the growth ...