Go to content
UR Home

Tuning of structure inversion asymmetry by the delta-doping position in (001)-grown GaAs quantum wells

URN to cite this document:
Lechner, Vera ; Golub, Leonid ; Olbrich, Peter ; Stachel, Sebastian ; Schuh, Dieter ; Wegscheider, Werner ; Belkov, Vassilij ; Ganichev, Sergey
Date of publication of this fulltext: 05 Aug 2009 13:58


Both structure and bulk inversion asymmetry in modulation-doped (001)-grown GaAs quantum wells were investigated employing the magnetic field induced photogalvanic effect.We demonstrate that the structure inversion asymmetry (SIA) can be accurately tailored by the delta-doping layer position. Symmetrically doped structures exhibit a substantial SIA due to impurity segregation during the growth ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons