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Tuning of structure inversion asymmetry by the delta-doping position in (001)-grown GaAs quantum wells

Lechner, Vera, Golub, Leonid, Olbrich, Peter, Stachel, Sebastian, Schuh, Dieter, Wegscheider, Werner, Belkov, Vassilij and Ganichev, Sergey (2009) Tuning of structure inversion asymmetry by the delta-doping position in (001)-grown GaAs quantum wells. Applied Physics Letters 94, 242109-1-242109-3.

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Date of publication of this fulltext: 05 Aug 2009 13:58

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Abstract

Both structure and bulk inversion asymmetry in modulation-doped (001)-grown GaAs quantum wells were investigated employing the magnetic field induced photogalvanic effect.We demonstrate that the structure inversion asymmetry (SIA) can be accurately tailored by the delta-doping layer position. Symmetrically doped structures exhibit a substantial SIA due to impurity segregation during the growth ...

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Item type:Article
Date:June 2009
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
ValueType
10.1063/1.3156027DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Partially
Item ID:8284
Owner only: item control page

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