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- URN to cite this document:
- urn:nbn:de:bvb:355-epub-82860
- DOI to cite this document:
- 10.5283/epub.8286
Abstract
We report the magnetogyrotropic photogalvanic effect (MPGE) in n-doped (110)-grown GaAs/AlGaAs quantum-well (QW) structures caused by free-carrier absorption of terahertz radiation in the presence of a magnetic field. The photocurrent behavior upon variation in the radiation-polarization state, magnetic field orientation, and temperature is studied. The developed theory of MPGE describes well all ...

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