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Magnetic ordering effects in a Mn-modulation-doped high mobility two-dimensional hole system

Wurstbauer, Ursula and Wegscheider, Werner (2009) Magnetic ordering effects in a Mn-modulation-doped high mobility two-dimensional hole system. Physical Review B 79 (15), pp. 155444-1.

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Other URL: http://link.aps.org/doi/10.1103/PhysRevB.79.155444


We have studied the magnetotransport properties of a manganese (Mn)-modulation-doped high mobility two-dimensional hole system in a strained InAs quantum well (QW) structure. At precisely T=600 mK a phase transition from paramagnetism to ferromagnetism can be observed by a change of the low-field magnetotransport behavior and hysteresis. In the magnetically ordered phase a superposition of ...


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Item type:Article
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
71.18.+y; 71.55.Eq; 72.15.Rn; 73.43.QtPACS
Keywords:doping profiles, effective mass, ferromagnetic-paramagnetic transitions, Hall effect, hole mobility, III-V semiconductors, indium compounds, magnetic hysteresis, magnetic moments, manganese, molecular beam epitaxial growth, semiconductor doping, semiconductor quantum wells, semimagnetic semiconductors, Shubnikov-de Haas effect, weak localisation
Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Partially
Item ID:8300
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