Terahertz luminescence and absorption under impurity breakdown in quantum wells and strained semiconductor layers - University of Regensburg Publication Server

Terahertz luminescence and absorption under impurity breakdown in quantum wells and
strained semiconductor layers

Vorobjev, L. E. ; Firsov, D. A. ; Shalygin, Vadim ; Panevin, V. Y. ; Sofronov, A. N. ; Ustinov, V. M. ; Zhukov, A. E. ; Egorov, A. Yu. ; Andrianov, A. V. ; Zakhar'in, A. O. ; Ganichev, Sergey ; Danilov, Sergey ; Kozlov, D. V.

Details

Item type:	Article
Journal or Publication Title:	Acta Physica Polonica A
Volume:	113
Page Range:	p. 925
Date:	2008
Institutions:	Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Dewey Decimal Classification:	500 Science > 530 Physics
Status:	Published
Refereed:	Yes, this version has been refereed
Created at the University of Regensburg:	Yes
Item ID:	8340

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Terahertz luminescence and absorption under impurity breakdown in quantum wells andstrained semiconductor layers

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Terahertz luminescence and absorption under impurity breakdown in quantum wells and
strained semiconductor layers