Resonant circular photogalvanic effect in GaN/AlGaN heterojunctions

URN to cite this document:: urn:nbn:de:bvb:355-epub-83474
DOI to cite this document:: 10.5283/epub.8347

Wittmann, Bernhard ; Golub, Leonid

; Danilov, Sergey ; Karch, J. ; Reitmaier, C. ; Kvon, Z. D. ; Vinh, N. Q. ; van der Meer, A. F. G. ; Murdin, B.

; Ganichev, Sergey

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Date of publication of this fulltext: 05 Aug 2009 13:59

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Abstract

The resonant circular photogalvanic effect is observed in wurtzite (0001)-oriented GaN low-dimensional structures excited by infrared radiation. The current is induced by angular-momentum transfer of photons to the photoexcited electrons at resonant intersubband optical transitions in a GaN/AlGaN heterojunction. The signal reverses upon the reversal of the radiation helicity or, at fixed ...