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Resonant circular photogalvanic effect in GaN/AlGaN heterojunctions
Wittmann, Bernhard, Golub, Leonid
, Danilov, Sergey, Karch, J., Reitmaier, C., Kvon, Z. D., Vinh, N. Q., van der Meer, A. F. G., Murdin, B.
und Ganichev, Sergey
(2008)
Resonant circular photogalvanic effect in GaN/AlGaN heterojunctions.
Physical Review B (PRB) 78, S. 205435.
Veröffentlichungsdatum dieses Volltextes: 05 Aug 2009 13:59
Artikel
DOI zum Zitieren dieses Dokuments: 10.5283/epub.8347
Zusammenfassung
The resonant circular photogalvanic effect is observed in wurtzite (0001)-oriented GaN low-dimensional structures excited by infrared radiation. The current is induced by angular-momentum transfer of photons to the photoexcited electrons at resonant intersubband optical transitions in a GaN/AlGaN heterojunction. The signal reverses upon the reversal of the radiation helicity or, at fixed ...
The resonant circular photogalvanic effect is observed in wurtzite (0001)-oriented GaN low-dimensional structures excited by infrared radiation. The current is induced by angular-momentum transfer of photons to the photoexcited electrons at resonant intersubband optical transitions in a GaN/AlGaN heterojunction. The signal reverses upon the reversal of the radiation helicity or, at fixed helicity, when the propagation direction of the photons is reversed. Making use of the tunability of the free-electron laser FELIX, we demonstrate that the current direction changes by sweeping the photon energy through the intersubband resonance condition, in agreement with theoretical considerations.
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| Dokumentenart | Artikel | ||||
| Titel eines Journals oder einer Zeitschrift | Physical Review B (PRB) | ||||
| Verlag: | AMER PHYSICAL SOC | ||||
|---|---|---|---|---|---|
| Ort der Veröffentlichung: | COLLEGE PK | ||||
| Band: | 78 | ||||
| Seitenbereich: | S. 205435 | ||||
| Datum | 2008 | ||||
| Institutionen | Physik > Institut für Experimentelle und Angewandte Physik > Professor Ganichev > Arbeitsgruppe Sergey Ganichev | ||||
| Identifikationsnummer |
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| Stichwörter / Keywords | FIELD-EFFECT TRANSISTORS; ALGAN/GAN; | ||||
| Dewey-Dezimal-Klassifikation | 500 Naturwissenschaften und Mathematik > 530 Physik | ||||
| Status | Veröffentlicht | ||||
| Begutachtet | Ja, diese Version wurde begutachtet | ||||
| An der Universität Regensburg entstanden | Ja | ||||
| URN der UB Regensburg | urn:nbn:de:bvb:355-epub-83474 | ||||
| Dokumenten-ID | 8347 |
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