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- URN to cite this document:
- urn:nbn:de:bvb:355-epub-98175
- DOI to cite this document:
- 10.5283/epub.9817
Abstract
We report here on anisotropy of spin polarization obtained in lateral all-semiconductor, all-electrical spin injection devices employing p+-(Ga,Mn)As/n+-GaAs Esaki diode structures as spin aligning contacts, resulting from the dependence of the efficiency of spin tunneling on the orientation of spins with respect to different crystallographic directions. We observed an in-plane anisotropy of 8% ...

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