Tunneling anisotropic spin polarization in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

URN to cite this document:: urn:nbn:de:bvb:355-epub-98175
DOI to cite this document:: 10.5283/epub.9817

Einwanger, Andreas ; Ciorga, Mariusz ; Wurstbauer, Ulrich ; Schuh, Dieter ; Wegscheider, Werner ; Weiss, Dieter

Preview

PDF
(349kB)

Date of publication of this fulltext: 20 Oct 2009 12:14

Alternative links to fulltext:DOI Publisher

Details

Preview

Export bibliographical data

Abstract

We report here on anisotropy of spin polarization obtained in lateral all-semiconductor, all-electrical spin injection devices employing p+-(Ga,Mn)As/n+-GaAs Esaki diode structures as spin aligning contacts, resulting from the dependence of the efficiency of spin tunneling on the orientation of spins with respect to different crystallographic directions. We observed an in-plane anisotropy of 8% ...