The focus of the Collaborative Research Centre is mainly on spintronics where one attempts to employ, in addition to the elementary charge of the carriers, their magnetic moment, the spin, as information carrier. To reach this goal, efficient spin injection, spin transport and the control, manipulation and detection of spin polarisation or of spin polarised currents are essential requirements. The central problem interconnecting all projects and project areas addresses the characterisation, control and manipulation of the spin degree of freedom in electronic systems of reduced dimension. As systems of reduced dimension we consider semiconductor-heterojunctions, containing low-dimensional charge carrier systems, tunnel junctions, thin layers of ferromagnetic semiconductor material (mainly GaMnAs), being nanopatterned or embedded in semiconductor heterojunctions, as well as mesoscopic systems, point contacts or molecular systems.The Collaborative Research Centre is grouped into the three project areas A, B, and C. Project area A includes experimental and theoretical investigations of charge transport through nanotubes, wires and molecules. In project area B the focus is on the ferromagnetic semiconductor material GaMnAs and on heterojunctions involving GaMnAs layers. Projects in this area concentrate on growth and characterisation of fundamental morphological, electrical and magnetic material properties of GaMnAs as well as on application of such layers to investigate spin injection, spin polarisation, spin dependent tunnelling or current induced magnetisation switching. Project area C finally combines experimental and theoretical explorations on spin dependent phenomena in semiconductor heterojunctions and nanostructures, ferromagnet-superconductor and ferromagnet-semiconductor hybrid structures.The long-term objective of the Collaborative Research Centre is on realisation of effective injection, manipulation and detection of spins in systems of reduced dimension. In addition the key components of a future room temperature spintronics shall be provided.
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