3D-Simulation of Novel Quantum Wire Transistors

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.10842

Wegscheider, Werner ; Pigorsch, C. ; Klix, W. ; Stenzel, R.

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Veröffentlichungsdatum dieses Volltextes: 02 Nov 2009 13:26

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Zusammenfassung

The output characteristics and the electronic behaviour of a quantum wire transistor (QWT) with a 1DEG channel have been simulated. The electron transport processes in the QWT are mainly influenced by quantum mechanical effects. A coupled microscopic/macroscopic simulation algorithm is used to calculate the electron density distribution in the electron gas under consideration of the confinement ...