3D-Simulation of Novel Quantum Wire Transistors

Wegscheider, Werner and Pigorsch, C. and Klix, W. and Stenzel, R. (1997) 3D-Simulation of Novel Quantum Wire Transistors. physica status solidi b 204 (1), pp. 346-349.

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Abstract

The output characteristics and the electronic behaviour of a quantum wire transistor (QWT) with a 1DEG channel have been simulated. The electron transport processes in the QWT are mainly influenced by quantum mechanical effects. A coupled microscopic/macroscopic simulation algorithm is used to calculate the electron density distribution in the electron gas under consideration of the confinement of the electrons. This algorithm includes the self-consistent solution of the Poisson and the Schrödinger equation.

Item Type:Article
Institutions: Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1002/1521-3951(199711)204:1<346::AID-PSSB346>3.0.CO;2-RDOI
Classification:
NotationType
73.40.Lq; 73.61.±rPACS
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner:Martin Kaiser
Deposited On:02 Nov 2009 14:26
Last Modified:21 Jul 2011 00:06
Item ID:10842
Owner Only: item control page