Haan, S. and Lorke, Axel and Kotthaus, J.P. and Wegscheider, Werner and Bichler, Max
Rectification in Mesoscopic Systems with Broken Symmetry: Quasiclassical Ballistic Versus Classical Transport.
Physical Review Letters 92 (5), 056806.
In suitably designed mesoscopic semiconductor structures, the phenomenon of ballistic rectification can be observed. A currently discussed microscopic model relates the observations to the interplay between fully quantized and quasiclassical current paths. We present measurements that contribute substantially to the clarification of the fascinating topic. In particular, we observe the opposite sign of the output voltage as compared to the prediction. Demonstrating the basic principle upon which the rectification is based—the asymmetry of the voltage drop in a quasiclassical wire—and extending the model to the classical transport regime, we can well explain our experiments as being caused by the interplay of quasiclassical ballistic and classical transport. Tunable ballistic rectifiers generating very large output signals and operating at room temperature raise the hope for future applications.
|Date:||6 February 2004|
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
| 73.23.Ad, 73.40.Ei||PACS|
|Keywords:||Ge-Si alloys, semiconductor materials, silicon, elemental semiconductors, semiconductor quantum wells, nonradiative transitions, electroluminescence, k.p calculations, carrier lifetime, carrier relaxation time, population inversion |
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||15 Dec 2009 08:51|
|Last Modified:||20 Jul 2011 22:12|