Kümmler, V. and Lell, Alfred and Härle, Volker and Schwarz, Ulrich and Schoedl, T. and Wegscheider, Werner (2004) Gradual facet degradation of (Al,In)GaN quantum well lasers. Applied Physics Letters 84 (16), pp. 2989-2991.
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In our study, III-nitride laser diodes with uncoated facets obtained by cleavage show a much faster degradation than coated ones. An increase in threshold current and drop of slope efficiency suggest increased absorption losses. Degradation experiments in different atmospheres prove the influence of the respective atmosphere and indicate the growth of an oxide film leading to increased ...
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|Date:||19 April 2004|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Keywords:||aluminium compounds, indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor lasers, semiconductor quantum wells, absorption|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited on:||11 Jan 2010 13:04|
|Last modified:||13 Mar 2014 12:20|