Kümmler, V. and Lell, Alfred and Härle, Volker and Schwarz, Ulrich and Schoedl, T. and Wegscheider, Werner
Gradual facet degradation of (Al,In)GaN quantum well lasers.
Applied Physics Letters 84 (16), pp. 2989-2991.
In our study, III-nitride laser diodes with uncoated facets obtained by cleavage show a much faster degradation than coated ones. An increase in threshold current and drop of slope efficiency suggest increased absorption losses. Degradation experiments in different atmospheres prove the influence of the respective atmosphere and indicate the growth of an oxide film leading to increased absorption. Because the observed degradation is insensitive to the photon density we suggest nonradiative centers, which are saturated at low photon densities, to be at the origin of degradation. No evidence for photon enhanced degradation of coated laser diodes was found. A dielectric coating efficiently protects the facets.
|Date:||19 April 2004|
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|Keywords:|| aluminium compounds, indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor lasers, semiconductor quantum wells, absorption|
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||11 Jan 2010 13:04|
|Last Modified:||20 Jul 2011 22:13|