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Gradual facet degradation of (Al,In)GaN quantum well lasers

Kümmler, V. and Lell, Alfred and Härle, Volker and Schwarz, Ulrich and Schoedl, T. and Wegscheider, Werner (2004) Gradual facet degradation of (Al,In)GaN quantum well lasers. Applied Physics Letters 84 (16), pp. 2989-2991.

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Abstract

In our study, III-nitride laser diodes with uncoated facets obtained by cleavage show a much faster degradation than coated ones. An increase in threshold current and drop of slope efficiency suggest increased absorption losses. Degradation experiments in different atmospheres prove the influence of the respective atmosphere and indicate the growth of an oxide film leading to increased ...

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Item Type:Article
Date:19 April 2004
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.1704861DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/84/2989/1Publisher
Classification:
NotationType
42.55.Px; 73.63.HsPACS
Keywords: aluminium compounds, indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor lasers, semiconductor quantum wells, absorption
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:11 Jan 2010 13:04
Last Modified:13 Mar 2014 12:20
Item ID:11802
Owner Only: item control page

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