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Cryogenic amplifier for fast real-time detection of single-electron tunneling

Vink, I. T and Nooitgedagt, T. and Schouten, R. N. and Vandersypen, L. M. K. and Wegscheider, Werner (2007) Cryogenic amplifier for fast real-time detection of single-electron tunneling. Applied Physics Letters 91 (12), p. 123512.

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Abstract

The authors employ a cryogenic high electron mobility transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1 K and the circuit has a bandwidth of 1 MHz. The noise contribution of the HEMT at high frequencies is only a few times higher than that of the QPC shot noise. The authors use this ...

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Item Type:Article
Date:20 September 2007
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.2783265DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/91/123512/1Publisher
Classification:
NotationType
73.40.Gk; 73.63.KvPACS
Keywords:electron mobility, quantum dots, tunnelling
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:25 Jan 2010 13:58
Last Modified:13 Mar 2014 12:42
Item ID:12495
Owner Only: item control page
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