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Annealing-induced transition from a (311)A-oriented Ga0.98Mn0.02As alloy to a GaMnAs/MnAs hybrid structure studied by angle-dependent magnetotransport

Elm, M. T. and Klar, P. J. and Heimbrodt, W. and Wurstbauer, Ursula and Reinwald, Matthias and Wegscheider, Werner (2008) Annealing-induced transition from a (311)A-oriented Ga0.98Mn0.02As alloy to a GaMnAs/MnAs hybrid structure studied by angle-dependent magnetotransport. Journal of Applied Physics 103 (9), 093710.

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Abstract

The angle-dependent behavior of the magneto-resistance of a series of low-temperature molecular beam epitaxy grown Ga0.98Mn0.02As samples on (311)A-GaAs-substrates is studied. The samples are annealed at different temperatures in a range from 300 °C to 500 °C, which leads to a redistribution of the manganese in the sample and finally to the formation of MnAs clusters. As a consequence, the ...

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Item Type:Article
Date:7 May 2008
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.2917414DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?JAPIAU/103/093710/1Publisher
Classification:
NotationType
73.61.Ey; 75.50.Pp; 75.47.Pq; 68.55.A-; # 61.72.Cc; 73.50.JtPACS
Keywords:annealing, gallium arsenide, gallium compounds, III-V semiconductors, magnetic anisotropy, magnetic epitaxial layers, magnetoresistance, manganese compounds, molecular beam epitaxial growth, semiconductor epitaxial layers, semimagnetic semiconductors
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:25 Jan 2010 14:02
Last Modified:13 Mar 2014 12:43
Item ID:12505
Owner Only: item control page
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