Elm, M. T. and Klar, P. J. and Heimbrodt, W. and Wurstbauer, Ursula and Reinwald, Matthias and Wegscheider, Werner
Annealing-induced transition from a (311)A-oriented Ga0.98Mn0.02As alloy to a GaMnAs/MnAs hybrid structure studied by angle-dependent magnetotransport.
Journal of Applied Physics 103 (9), 093710.
The angle-dependent behavior of the magneto-resistance of a series of low-temperature molecular beam epitaxy grown Ga0.98Mn0.02As samples on (311)A-GaAs-substrates is studied. The samples are annealed at different temperatures in a range from 300 °C to 500 °C, which leads to a redistribution of the manganese in the sample and finally to the formation of MnAs clusters. As a consequence, the angle-dependence of the magneto-resistance changes with increasing annealing temperature and vanishes finally at an annealing temperature of 400 °C. The observed anisotropy of the magneto-resistance can be correlated with the magnetic anisotropy of the magnetization. The parameters describing this magnetic anisotropy and their changes due to annealing are extracted from the experimental magneto-resistance data by a fitting procedure. The magnetocrystalline anisotropy of the samples can be described by the sum of cubic and uniaxial contributions. The former are not affected by the annealing whereas the latter change considerably.
|Date:||7 May 2008|
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|73.61.Ey; 75.50.Pp; 75.47.Pq; 68.55.A-; # 61.72.Cc; 73.50.Jt||PACS|
|Keywords:||annealing, gallium arsenide, gallium compounds, III-V semiconductors, magnetic anisotropy, magnetic epitaxial layers, magnetoresistance, manganese compounds, molecular beam epitaxial growth, semiconductor epitaxial layers, semimagnetic semiconductors|
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||25 Jan 2010 14:02|
|Last Modified:||20 Jul 2011 22:18|