Elm, M. T. and Klar, P. J. and Heimbrodt, W. and Wurstbauer, Ursula and Reinwald, Matthias and Wegscheider, Werner (2008) Annealing-induced transition from a (311)A-oriented Ga0.98Mn0.02As alloy to a GaMnAs/MnAs hybrid structure studied by angle-dependent magnetotransport. Journal of Applied Physics 103 (9), 093710.
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The angle-dependent behavior of the magneto-resistance of a series of low-temperature molecular beam epitaxy grown Ga0.98Mn0.02As samples on (311)A-GaAs-substrates is studied. The samples are annealed at different temperatures in a range from 300 °C to 500 °C, which leads to a redistribution of the manganese in the sample and finally to the formation of MnAs clusters. As a consequence, the ...
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|Date:||7 May 2008|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Keywords:||annealing, gallium arsenide, gallium compounds, III-V semiconductors, magnetic anisotropy, magnetic epitaxial layers, magnetoresistance, manganese compounds, molecular beam epitaxial growth, semiconductor epitaxial layers, semimagnetic semiconductors|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||25 Jan 2010 14:02|
|Last Modified:||13 Mar 2014 12:43|