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Ferromagnetic GaMnAs grown on (110) faced GaAs

Wurstbauer, Ursula and Sperl, Matthias and Soda, Marcello and Neumaier, Daniel and Schuh, Dieter and Bayreuther, Günther and Zweck, Josef and Wegscheider, Werner (2008) Ferromagnetic GaMnAs grown on (110) faced GaAs. Applied Physics Letters 92 (10), p. 102506.

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Abstract

Thin Ga0.94Mn0.06As layers have been grown by low temperature molecular beam epitaxy on (110) GaAs substrates and on [110] and [−110] oriented GaAs cleaved edges. The Curie temperatures TC for the as-grown samples ranges from 46 to 80 K. After annealing at low temperatures TC increases up to 115 K. In addition, magnetic anisotropies determined by superconducting quantum interference device magnetometry and magnetotransport measurements are reported.

Item Type:

Article

Institutions:

Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider

Identification Number:

Value	Type
10.1063/1.2884683	DOI

Related URLs:

URL	URL Type
http://link.aip.org/link/?APPLAB/92/102506/1	Publisher

Classification:

Notation	Type
81.05.Ea; 81.15.Hi; 68.55.ag; 75.50.Pp; 75.50.Dd; 73.61.Ey	PACS

Keywords:

annealing, Curie temperature, ferromagnetic materials, gallium arsenide, galvanomagnetic effects, III-V semiconductors, magnetic anisotropy, magnetic epitaxial layers, manganese compounds, molecular beam epitaxial growth, semiconductor epitaxial layers, semiconductor growth, semimagnetic semiconductors

Subjects:

500 Science > 530 Physics

Status:

Published

Refereed:

Unknown

Created at the University of Regensburg:

Unknown

Owner:

Martin Kaiser

Deposited On:

01 Feb 2010 14:07