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Ferromagnetic GaMnAs grown on (110) faced GaAs

Wurstbauer, Ursula and Sperl, Matthias and Soda, Marcello and Neumaier, Daniel and Schuh, Dieter and Bayreuther, Günther and Zweck, Josef and Wegscheider, Werner (2008) Ferromagnetic GaMnAs grown on (110) faced GaAs. Applied Physics Letters 92 (10), p. 102506.

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Thin Ga0.94Mn0.06As layers have been grown by low temperature molecular beam epitaxy on (110) GaAs substrates and on [110] and [−110] oriented GaAs cleaved edges. The Curie temperatures TC for the as-grown samples ranges from 46 to 80 K. After annealing at low temperatures TC increases up to 115 K. In addition, magnetic anisotropies determined by superconducting quantum interference device magnetometry and magnetotransport measurements are reported.

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Item type:Article
Date:11 March 2008
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
Related URLs:
81.05.Ea; 81.15.Hi; 68.55.ag; 75.50.Pp; 75.50.Dd; 73.61.EyPACS
Keywords:annealing, Curie temperature, ferromagnetic materials, gallium arsenide, galvanomagnetic effects, III-V semiconductors, magnetic anisotropy, magnetic epitaxial layers, manganese compounds, molecular beam epitaxial growth, semiconductor epitaxial layers, semiconductor growth, semimagnetic semiconductors
Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Deposited on:01 Feb 2010 13:07
Last modified:13 Mar 2014 12:48
Item ID:12636
Owner only: item control page


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