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Ferromagnetic GaMnAs grown on (110) faced GaAs

Wurstbauer, Ursula and Sperl, Matthias and Soda, Marcello and Neumaier, Daniel and Schuh, Dieter and Bayreuther, Günther and Zweck, Josef and Wegscheider, Werner (2008) Ferromagnetic GaMnAs grown on (110) faced GaAs. Applied Physics Letters 92 (10), p. 102506.

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Abstract

Thin Ga0.94Mn0.06As layers have been grown by low temperature molecular beam epitaxy on (110) GaAs substrates and on [110] and [−110] oriented GaAs cleaved edges. The Curie temperatures TC for the as-grown samples ranges from 46 to 80 K. After annealing at low temperatures TC increases up to 115 K. In addition, magnetic anisotropies determined by superconducting quantum interference device ...

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Item Type:Article
Date:11 March 2008
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.2884683DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/92/102506/1Publisher
Classification:
NotationType
81.05.Ea; 81.15.Hi; 68.55.ag; 75.50.Pp; 75.50.Dd; 73.61.EyPACS
Keywords:annealing, Curie temperature, ferromagnetic materials, gallium arsenide, galvanomagnetic effects, III-V semiconductors, magnetic anisotropy, magnetic epitaxial layers, manganese compounds, molecular beam epitaxial growth, semiconductor epitaxial layers, semiconductor growth, semimagnetic semiconductors
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:01 Feb 2010 13:07
Last Modified:13 Mar 2014 12:48
Item ID:12636
Owner Only: item control page
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