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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-174895
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.17489
Zusammenfassung
In GaP:N (Zn,Te) light emitting diodes electroluminescence and photoluminescence have been excited at 4.2K by a Q-switched CO2 laser and a pulsed N2 laser, respectively. In the luminescence spectral transitions of free holes to bound donor states could be identified, being responsible for the fast radiative decay on a nanosecond timescale.
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