Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions

Moser, Jürgen and Zenger, Marcus and Gerl, Christian and Schuh, Dieter and Meier, R. and Chen, PeiFeng and Bayreuther, Günther and Wegscheider, Werner and Weiss, Dieter and Lai, C. and Huang, R. and Kosuth, M. and Ebert, H. (2006) Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions. Applied Physics Letters 89, p. 162106.

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Abstract

We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and observable at room temperature. If an epitaxial Fe/GaAs(001) interface is involved, the tunnel junction exhibits a bias dependent inversion of the TMR effect. This is a first experimental signature for band structure effects at a Fe/GaAs interface and relevant for spin injection experiments.

Item Type:

Article

Institutions:

Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Günther Bayreuther
Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider

Projects:

SFB 689: Spinphänomene in reduzierten Dimensionen

Identification Number: