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Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

Bel'kov, V. and Ganichev, Sergey and Schneider, Petra and Back, Christian and Oestreich, M. and Rudolf, J. and Hägele, D. and Golub, L. and Wegscheider, Werner and Prettl, Wilhelm (2003) Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells. Solid State Communications 128 (8), pp. 283-286.

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Abstract

We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.

Item Type:Article
Institutions: Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Christian Back
Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Identification Number:
ValueType
10.1016/j.ssc.2003.08.022DOI
Keywords:A. Quantum wells; D. Spin-orbit effects
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner:Webmaster Back
Deposited On:20 Mar 2007
Last Modified:20 Jul 2011 23:04
Item ID:1913
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