Luminescence studies of a Si/SiO₂ superlattice

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.19328

Averboukh, B. ; Huber, Rupert ; Cheah, K. W. ; Shen, Y. R. ; Qin, G. G. ; Ma, Z. C. ; Zong, W. H.

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Veröffentlichungsdatum dieses Volltextes: 01 Feb 2011 11:15

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Photoluminescence and electroluminescence from a Si/SiO2 superlattice have been measured. They show similar characteristics and exhibit an inhomogeneously broadened photoluminescence band peaked at 2.06 eV. The excitation spectrum indicates that excitations occur in the Si layers. The insensitivity of the luminescence spectrum and decay to temperature and excitation wavelength suggests that ...