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Ionization of impurities in semiconductors by intense FIR radiation

Ganichev, Sergey (2003) Ionization of impurities in semiconductors by intense FIR radiation. In: Svechnikov, Sergey V. and Valakh, Mikhail Y., (eds.) Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics. Proceedings of SPIE, 5024. SPIE, Bellingham, Washington, pp. 12-23. ISBN 0819448257; 9780819448255.

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An analysis is made of the ionization of deep impurity centers induced by high-intensity terahertz radiation whose photon energies are tens of times lower than the impurity ionization energy. Under these conditions, ionization can be described as phonon-assisted tunneling in which carrier emission is accompanied by defect tunneling in configuration space and electron tunneling in the electric ...


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Item Type:Book Section
Date:April 2003
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Identification Number:
Subjects:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Deposited On:05 Oct 2007
Last Modified:17 Nov 2009 04:12
Item ID:2177
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