Ganichev, Sergey and Ziemann, E. and Yassievich, Irina and Perel, V. and Prettl, Wilhelm
Characterization of deep impurities in semiconductors by terahertz tunneling ionization.
Materials Science in Semiconductor Processing 4 (1-3), pp. 281-284.
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Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/materialscience2001p282_charact.pdf
Tunneling ionization in high-frequencyfields as well as in static fields is suggested as a method for the
characterization of deep impurities in semiconductors. It is shown that an analysis of the field and temperature
dependences of the ionization probabilityallows to obtain defect parameters like the charge of the impurity, tunneling times, the Huang–Rhys parameter, the difference between ...
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