Ziemann, E. and Ganichev, Sergey and Yassievich, Irina and Perel, V. and Prettl, Wilhelm (2000) Characterization of deep impurities in semiconductors by terahertz tunneling ionization. Journal of Applied Physics 87 (8), pp. 3843-3849.
Tunneling ionization in high frequency fields as well as in static fields is suggested as a method for the characterization of deep impurities in semiconductors. It is shown that an analysis of the field and temperature dependences of the ionization probability allows to obtain defect parameters like the charge of the impurity, tunneling times, the Huang–Rhys parameter, the difference between ...
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|Institutions:||Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited on:||05 Oct 2007|
|Last modified:||13 Mar 2014 10:16|