Effect of pulsed FIR laser radiation on tunnel and channel resistance of delta-doped GaAs

Kotel'nikov, I. and Shul'man, A. and Mordovets, N. and Varvanin, N. and Ganichev, Sergey and Mayerhofer, B. and Prettl, Wilhelm (1995) Effect of pulsed FIR laser radiation on tunnel and channel resistance of delta-doped GaAs. In: Towe, E., (ed.) Proceedings / 1995 International Semiconductor Device Research Symposium, December 5 - 8, 1995, Band 1. Engineering Academic Outreach, University of Virginia, Charlottesville, Va., p. 99. ISBN 1-88092-003-4.

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Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/Proceedings_ISDRS_Charlotesville_1995p99effect_of_pulsed.pdf

Item Type:	Book Section
Institutions:	Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Subjects:	500 Science > 530 Physics
Status:	Published
Refereed:	Yes, this version has been refereed
Created at the University of Regensburg:	Yes
Owner:	Christoph Drexler
Deposited On:	05 Oct 2007
Last Modified:	20 Jul 2011 23:09
Item ID:	2250