Endres, Bernhard and Ciorga, Mariusz and Wagner, Robert and Ringer, Sebastian and Utz, Martin and Bougeard, Dominique and Weiss, Dieter and Back, Christian H. and Bayreuther, Günther (2012) Nonuniform current and spin accumulation in a 1 μm thick n-GaAs channel. Applied Physics Letters 100, p. 92405.
Other URL: http://dx.doi.org/10.1063/1.3691175
The spin accumulation in a n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 μm thick n-GaAs channel with the maximum polarization near the contact edge opposite to the maximum current density. The one-dimensional model of electron drift and spin diffusion, frequently used, cannot explain this observation. It also leads to incorrect spin lifetimes from Hanle curves with a strong bias and distance dependence. Numerical simulations based on a two-dimensional drift-diffusion model, however, reproduce the observed spin distribution quite well and lead to realistic spin lifetimes.
|Date:||1 March 2012|
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Christian Back|
Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
|Projects:||SFB 689: Spinphänomene in reduzierten Dimensionen|
|Keywords:||current density, gallium arsenide, Hanle effect, III-V semiconductors, numerical analysis, spin dynamics, spin polarised transport PACS|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||06 Mar 2012 07:14|
|Last Modified:||09 May 2012 11:51|