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Tunneling anisotropic magnetoresistance effect in p+(Ga,Mn)As/n+GaAs Esaki diode

Ciorga, Mariusz and Einwanger, Andreas and Sadowski, J. and Wegscheider, Werner and Weiss, Dieter (2007) Tunneling anisotropic magnetoresistance effect in p+(Ga,Mn)As/n+GaAs Esaki diode. Phys. Stat. Sol. A 204, p. 186.

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We have performed magnetotransport experiments on p+-(Ga,Mn)As/n+-GaAs Esaki diode devices. The spin-valve-like signal was observed in these devices in an in-plane magnetic field configuration due to Tunneling Anisotropic Magnetoresistance effect. The pattern of the observed magnetic reversal process strongly depends on the observed magnetic anisotropy of the (Ga,Mn)As layer - depending on its ...


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Item type:Article
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Deposited on:15 Nov 2007
Last modified:20 Jan 2010 04:06
Item ID:2622
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