Ciorga, Mariusz and Einwanger, Andreas and Sadowski, J. and Wegscheider, Werner and Weiss, Dieter (2007) Tunneling anisotropic magnetoresistance effect in p+(Ga,Mn)As/n+GaAs Esaki diode. Phys. Stat. Sol. A 204, p. 186.
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We have performed magnetotransport experiments on p+-(Ga,Mn)As/n+-GaAs Esaki diode devices. The spin-valve-like signal was observed in these devices in an in-plane magnetic field configuration due to Tunneling Anisotropic Magnetoresistance effect. The pattern of the observed magnetic reversal process strongly depends on the observed magnetic anisotropy of the (Ga,Mn)As layer - depending on its type the sign of the spin-valve-like signal can be changed by a simple rotation of the magnetic field by 90° or not. The type of the anisotropy is found to be strongly shaped, in a random way, during processing of the wafer.
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
|Projects:||SFB 689: Spinphänomene in reduzierten Dimensionen|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||15 Nov 2007|
|Last Modified:||20 Jan 2010 05:06|
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