Wild, A. and Kierig, Johannes and Sailer, J. and Ager, III, J. W. and Haller, E. E. and Abstreiter, Gerhard and Ludwig, S. and Bougeard, Dominique
Few electron double quantum dot in an isotopically purified 28Si quantum well.
Appl. Phys. Lett. 100, p. 143110.
at publisher (via DOI)
We present a few electron double quantum dot device defined in an isotopically purified 28Si quantum well (QW). An electron mobility of 5.5·104cm2(Vs)-1 is observed in the QW, which is the highest mobility ever reported for a two-dimensional electron system in 28Si. The residual concentration of 29Si nuclei in the 28Si QW is lower than 103ppm, at the verge where the hyperfine interaction is ...
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|Date:||6 April 2012|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard|
|Keywords:||electron mobility, elemental semiconductors, Ge-Si alloys, hyperfine interactions, semiconductor heterojunctions, semiconductor quantum dots, semiconductor quantum wells, silicon |
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||23 Oct 2012 06:32|
|Last Modified:||13 Mar 2014 19:18|