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Few electron double quantum dot in an isotopically purified 28Si quantum well

Wild, A. and Kierig, Johannes and Sailer, J. and Ager, III, J. W. and Haller, E. E. and Abstreiter, Gerhard and Ludwig, S. and Bougeard, Dominique (2012) Few electron double quantum dot in an isotopically purified 28Si quantum well. Appl. Phys. Lett. 100, p. 143110.

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We present a few electron double quantum dot device defined in an isotopically purified 28Si quantum well (QW). An electron mobility of 5.5·104cm2(Vs)-1 is observed in the QW, which is the highest mobility ever reported for a two-dimensional electron system in 28Si. The residual concentration of 29Si nuclei in the 28Si QW is lower than 103ppm, at the verge where the hyperfine interaction is ...


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Item type:Article
Date:6 April 2012
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Identification Number:
10.1063/1.3701588 DOI
Keywords:electron mobility, elemental semiconductors, Ge-Si alloys, hyperfine interactions, semiconductor heterojunctions, semiconductor quantum dots, semiconductor quantum wells, silicon
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Deposited on:23 Oct 2012 06:32
Last modified:24 Oct 2016 13:47
Item ID:26503
Owner only: item control page


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