| PDF - Veröffentlichte Version (184kB) |
- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-277765
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.27776
Zusammenfassung
A detailed Raman characterization of the structural properties of as-grown and annealed self-assembled Si/Ge dot multilayers is reported in this paper. Several new modes in as-grown or annealed Si/Ge dots and a frequency splitting of 4.2 cm(-1) between the longitudinal (LO) and transversal optical (TO) Ge-Ge modes in as-grown Si/Ge dots are observed in Raman spectra. An average Ge content of 0.8 ...
Nur für Besitzer und Autoren: Kontrollseite des Eintrags