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Transmission electron microscopy of short-period Si/Ge strained-layer superlattices on Ge substrates

Wegscheider, Werner and Eberl, Karl and Cerva, H. and Oppolzer, H. (1989) Transmission electron microscopy of short-period Si/Ge strained-layer superlattices on Ge substrates. Applied Physics Letters 55 (5), p. 448.

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Abstract

Structural investigations of high quality Si/Ge strained-layer superlattices (SLSs) on [001] oriented Ge substrates prepared by molecular beam epitaxy are presented. Cross-sectional transmission electron microscopy reveals that a defect-free superlattice is achieved for a structure composed of a 20-period sequence of 3 monolayers (ML) Si and 9 ML Ge. High-resolution lattice images and electron ...

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Item Type:Article
Date:30 July 1989
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.101871DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:26 Oct 2009 13:08
Last Modified:13 Mar 2014 11:11
Item ID:9977
Owner Only: item control page

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