Optical transitions in strained Ge/Si superlattices

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.10005

Schmidt, U. ; Humlíček, J. ; Lukes, F. ; Cardona, M. ; Presting, H. ; Kibbel, H. ; Kasper, E. ; Eberl, Karl ; Wegscheider, Werner ; Abstreiter, Gerhard

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Veröffentlichungsdatum dieses Volltextes: 26 Okt 2009 14:05

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Zusammenfassung

Band-to-band infrared absorption has been studied in a series of Sn1Gem (m=11, 15, and 21) strained layer superlattices for the first time. The absorption coefficient shows a quadratic increase with two onsets, characteristic for indirect transitions. From a numerical fit to the absorption spectra, band gap energies are determined in the energy range between 0.55 and 0.75 eV, in accordance with ...