In-plane Raman scattering of [001]-grown Si/Ge superlattices

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.10009

Schorer, R. ; Wegscheider, Werner ; Eberl, Karl ; Kasper, E. ; Kibbel, H. ; Abstreiter, Gerhard

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Veröffentlichungsdatum dieses Volltextes: 26 Okt 2009 14:07

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Zusammenfassung

We present a micro-Raman study of short-period [001] Si/Ge superlattices. The submicron spatial resolution of this technique enables in-plane scattering geometries, thus overcoming the severe limitations of conventional Raman set-ups for backscattering from the growth surface, where only longitudinal modes can be observed. We were able to study the complete phonon spectrum consisting of confined ...