Wegscheider, Werner, Pfeiffer, Loren, Dignam, M., Pinczuk, A., West, Ken und Hull, R.
Lasing in lower-dimensional structures formed by cleaved edge overgrowth.
Semiconductor Science and Technology 9 (11 S), S. 1933-1938.
Zum Artikel beim Verlag (über DOI)
We have used the molecular beam growth technique, which we call cleaved edge overgrowth, to fabricate highly efficient lasers that operate in the 1D quantum limit. The active region of our laser consists of atomically precise quantum wires that form at the T-shaped intersections of 7 nm wide GaAs quantum wells grown along the (001) and, after an in situ cleave, along the (110) crystal axis. The ...
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