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Spin polarized tunneling and spin injection in Fe-GaAs hybrid structures

Chen, Peifeng (2006) Spin polarized tunneling and spin injection in Fe-GaAs hybrid structures. PhD, Universität Regensburg.

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Date of publication of this fulltext: 26 Sep 2006 07:51

Abstract (English)

Spin electronics, or spintronics, is a new branch of electronics whereby the spin degree of freedom in electronic devices is employed. For understanding the physics of spin injection in semiconductors, this thesis is aimed at contributing to fabricate ferromagnetic metal-semiconductor hybrid structures, typically Fe-GaAs hybrid structures, in which the spin-polarized transport phenomena are ...


Translation of the abstract (German)

An Fe/GaAs/Fe/Co magnetischen Tunnelelementen werden bei unterschiedlichen Temperaturen der TMR-Effekt und die I-U- Charakteristik gemessen. Die Interpretation der experimentellen Daten durch das theoretische Modell erlaubt uns, die Qualität der Struktur zu charakterisieren. Spinpolarisiertes Tunneln durch eine schwefelpassivierte GaAs-Barriere wurde untersucht, um Klarheit über den ...


Export bibliographical data

Item type:Thesis of the University of Regensburg (PhD)
Date:25 September 2006
Referee:Werner (Prof. Dr.) Wegscheider
Date of exam:19 September 2006
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Keywords:Magnetoelektronik , Eisen , Galliumarsenid , Tunneleffekt , Spinpolarisiertes Tunneln , Spininjektion , spin polarized tunneling , spin injection
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:10468
Owner only: item control page


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