Current injection GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.10833

Wegscheider, Werner ; Pfeiffer, Loren ; West, Kenneth ; Leibenguth, Ronald E.

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Veröffentlichungsdatum dieses Volltextes: 02 Nov 2009 13:17

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We report the operation of quantum wire (QWR) semiconductor diode lasers fabricated by cleaved edge overgrowth. The active region in these index guided lasers consists of 15 QWRs formed at the right angle intersection of 15 [001] oriented quantum wells (QWs) each 7 nm wide, with a single 7-nm-wide QW grown along the [110] direction. Doping with Be and Si in the two orthogonal growth directions ...