GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.10835

Wegscheider, Werner ; Pfeiffer, Loren N. ; West, Kenneth W. ; Pinczuk, A. ; Dignam, M. M. ; Hull, R. ; Leibenguth, R. E.

PDF
(760kB) - Nur für Mitarbeiter des Archivs

Veröffentlichungsdatum dieses Volltextes: 02 Nov 2009 14:09

Alternative Links zum Volltext:DOI

Details

Bibliographische Daten exportieren

Zusammenfassung

We have used the molecular beam growth technique which we call “cleaved edge overgrowth” to fabricate quantum wire lasers, in which 1D quantum confinement is entirely defined by the growth process. The active region of our lasers consists of atomically precise quantum wires that form at the T-shaped intersections of 7 nm wide GaAs quantum wells grown along the [001] crystal axis and after an in ...