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Wegscheider, Werner ; Pigorsch, C. ; Klix, W. ; Stenzel, R.

3D-Simulation of Novel Quantum Wire Transistors

Wegscheider, Werner, Pigorsch, C., Klix, W. and Stenzel, R. (1997) 3D-Simulation of Novel Quantum Wire Transistors. physica status solidi b 204 (1), pp. 346-349.

Date of publication of this fulltext: 02 Nov 2009 13:26
Article
DOI to cite this document: 10.5283/epub.10842


Abstract

The output characteristics and the electronic behaviour of a quantum wire transistor (QWT) with a 1DEG channel have been simulated. The electron transport processes in the QWT are mainly influenced by quantum mechanical effects. A coupled microscopic/macroscopic simulation algorithm is used to calculate the electron density distribution in the electron gas under consideration of the confinement ...

The output characteristics and the electronic behaviour of a quantum wire transistor (QWT) with a 1DEG channel have been simulated. The electron transport processes in the QWT are mainly influenced by quantum mechanical effects. A coupled microscopic/macroscopic simulation algorithm is used to calculate the electron density distribution in the electron gas under consideration of the confinement of the electrons. This algorithm includes the self-consistent solution of the Poisson and the Schrödinger equation.



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Details

Item typeArticle
Journal or Publication Titlephysica status solidi b
Publisher:John Wiley & Sons
Volume:204
Number of Issue or Book Chapter:1
Page Range:pp. 346-349
Date1997
InstitutionsPhysics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number
ValueType
10.1002/1521-3951(199711)204:1<346::AID-PSSB346>3.0.CO;2-RDOI
Classification
NotationType
73.40.Lq; 73.61.±rPACS
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedUnknown
Created at the University of RegensburgUnknown
Item ID10842

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