Go to content
UR Home

Direct writing of in-plane-gated nanostructures by focused laser beam-induced doping

Baumgartner, P., Wegscheider, Werner, Bichler, Max, Groos, G. and Abstreiter, Gerhard (1998) Direct writing of in-plane-gated nanostructures by focused laser beam-induced doping. Physica E Low-dimensional Systems and Nanostructures 2 (1-4), pp. 441-448.

Download (281kB) - Repository staff only
Date of publication of this fulltext: 09 Nov 2009 13:07

at publisher (via DOI)


The fabrication technique of local doping with a focused laser beam is employed to fabricate electronic nanostructures. Zn-doped regions are used to fabricate in-plane electron channels in a high mobility GaAs/AlGaAs heterostructure. The operation of different devices, like quantum point contacts, single electron transistors or Aharonov–Bohm rings, is demonstrated. The coplanar gate geometry improves the performance of the devices in charge sensing applications.

Export bibliographical data

Item type:Article
Date:15 July 1998
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
Keywords:Transport; Electronic nanostructures; Fabrication technique
Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Item ID:10873
Owner only: item control page


Downloads per month over past year

  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons