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Direct writing of in-plane-gated nanostructures by focused laser beam-induced doping

DOI to cite this document:
Baumgartner, P. ; Wegscheider, Werner ; Bichler, Max ; Groos, G. ; Abstreiter, Gerhard
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Date of publication of this fulltext: 09 Nov 2009 13:07


The fabrication technique of local doping with a focused laser beam is employed to fabricate electronic nanostructures. Zn-doped regions are used to fabricate in-plane electron channels in a high mobility GaAs/AlGaAs heterostructure. The operation of different devices, like quantum point contacts, single electron transistors or Aharonov–Bohm rings, is demonstrated. The coplanar gate geometry improves the performance of the devices in charge sensing applications.

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