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- DOI to cite this document:
- 10.5283/epub.10876
Abstract
The dynamics of composite fermions in the ballistic transport regime in etched semiconductor nanostructures, imposed on a two-dimensional electron gas, has been investigated around half Landau level filling. The non-uniform electrostatic potential in the vicinity of soft walls in such etched nanostructures has a strong repercussion on the trajectories described by the quasi-particles. A ...
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