In-plane gates and nanostructures fabricated by direct oxidation of semiconductor heterostructures with an atomic force microscope

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.10881

Held, R. ; Vancura, T. ; Heinzel, Thomas ; Ensslin, Klaus ; Holland, M. ; Wegscheider, Werner

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Veröffentlichungsdatum dieses Volltextes: 09 Nov 2009 13:17

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The surface of shallow Ga[Al]As heterostructures is locally oxidized with an atomic force microscope. The electron gas underneath the oxide is depleted. We demonstrate experimentally that these depleted regions of the two-dimensional electron gas can be made highly resistive at liquid nitrogen temperatures. Thus, local anodic oxidation of high electron mobility transistors with an atomic force ...