Magnetization of the Fractional Quantum Hall States

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.10893

Meinel, I. ; Hengstmann, T. ; Grundler, D. ; Heitmann, Detlef ; Wegscheider, Werner ; Bichler, Max

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Veröffentlichungsdatum dieses Volltextes: 09 Nov 2009 13:33

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Zusammenfassung

We observe electron magnetism originating from fractional quantum Hall states in single-layered GaAs heterojunctions. This magnetization is entirely governed by electron-electron interaction effects. The studies were performed at temperatures between 0.3 and 7 K on gated high-mobility two-dimensional electron systems. We observe oscillations in the magnetic moment at various fractional filling ...