In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11006

Lüscher, S. ; Fuhrer, A. ; Held, R. ; Heinzel, Thomas ; Ensslin, Klaus ; Wegscheider, Werner

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Veröffentlichungsdatum dieses Volltextes: 30 Nov 2009 13:09

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Zusammenfassung

A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes, and the contacts of the dot to source and drain. Both the number of electrons in the dot as well as its coupling to the leads can be tuned with an additional, ...