Lateral tunneling through the controlled barrier between edge channels in a two-dimensional electron system

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11011

Shashkin, A. A. ; Dolgopolov, V. T. ; Deviatov, E. V. ; Irmer, B. ; Haubrich, A. G. C. ; Kotthaus, J. P. ; Bichler, Max ; Wegscheider, Werner

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Veröffentlichungsdatum dieses Volltextes: 30 Nov 2009 13:13

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A study is made of the lateral tunneling between edge channels at the depletion-induced edges of a gated two-dimensional electron system, through a gate-voltage-controlled barrier arising when the donor layer of the heterostructure is partly removed along a fine strip by means of an atomic force microscope. For a sufficiently high barrier the typical current-voltage characteristic is found to be ...